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| SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - OCTOBER 1995 7 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417 FMMT415 FMMT417 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (Pulse Width=20ns) Power Dissipation Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage SYMBOL FMMT415 V(BR)CES FMMT417 VCEO(sus) SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg MIN. 260 320 100 6 0.1 10 0.1 0.5 0.9 15 25 25 40 8 MHz pF TYP. FMMT415 260 100 6 500 60 330 -55 to +150 MAX. UNIT V V V V A A A SOT23 FMMT417 320 100 UNIT V V V mA A mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). CONDITIONS. IC=1mA Tamb= -55 to +150C IC=1mA IC=100A IE=10A VCB=180V VCB=180V, Tamb=100C VEB=4V IC=10mA, IB=1mA* IC=10mA, IB=1mA* VC=200V, CCE=620pF VC=250V, CCE=620pF IC=10mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, IE=0 f=100MHz Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current in Second Breakdown (Pulsed) Static Forward Current Transfer Ratio Transition Frequency Collector-Base Capacitance Emitter-Base Breakdown Voltage V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) ISB hFE fT Ccb V V A A *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 104 FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 140 1. >4x10 Operations Without Failure 2. 10% Operations To Failure 3. 10! Operations To Failure 40 30 - (A) 100 80 60 40 20 0 0 20 40 60 1. 2. 3. - (A) 120 V+ = 250V 20 V+ = 200V 10 I I 0 -60 -40 -20 0 80 100 120 140 160 180 20 40 60 80 100 120 140 160 180 Maximum Avalanche Current v Pulse Width 100 80 60 175C V+- =10V 220 200 Pulse Width (ns) Temperature (C) IUSB v Temperature for the specified conditions - (V) 180 160 Risetime of Base Drive Current = 5mA/ns h 40 20 0 25C -55C V 140 120 I* =50mA I* =100mA I* =200mA 1n 10n 100n 100A 1mA 10mA 100mA 1A 100 100p Collector Current Collector-Emitter Capacitance (F) hFE v IC 180 175 170 I* =60mA Minimum starting voltage as a function of capacitance 160 150 - (V) 165 160 155 150 145 1 C=620pF - (V) I* =100mA I* =200mA 140 C = 620pF 120 V V 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Risetime of Base Drive (mA/ns) Temperature (C) Minimum starting voltage as a function of drive current Minimum starting voltage as a function of temperature 3 - 105 |
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